PDB2216S mosfet equivalent, dual n-channel mosfet.
* Fast switching
* Green Device Available
* Suit for 1.8V Gate Drive Applications
Applications
* Notebook
* Load Switch
* Networking
* Hand-he.
DFN2X2 Dual 2EP Pin Configuration
˙
S1
G1 D2
D1 G2 S2
D1
G
G1
G2
D2
BVDSS 20V
RDSON 40m
ID 5.2A
Features
These N+P dual Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high.
Image gallery
Download